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SI8851EDB-T2-E1
- Part Number:
- SI8851EDB-T2-E1
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CH 20V 7.7A MICRO FOOT
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14123 Pieces
- Data sheet:
- SI8851EDB-T2-E1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | Power Micro Foot® |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 7A, 4.5V |
| Power Dissipation (Max): | 660mW (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 30-XFBGA |
| Other Names: | SI8851EDB-T2-E1TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Manufacturer Part Number: | SI8851EDB-T2-E1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 8V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 20V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET P-CH 20V 7.7A MICRO FOOT |
| Current - Continuous Drain (Id) @ 25°C: | 7.7A (Ta) |
| Email: | [email protected] |
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