SI7190DP-T1-GE3
SI7190DP-T1-GE3
Part Number:
SI7190DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 250V 18.4A PPAK SO-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
12169 Pieces
Data sheet:
SI7190DP-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:118 mOhm @ 4.4A, 10V
Power Dissipation (Max):5.4W (Ta), 96W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Other Names:SI7190DP-T1-GE3TR
SI7190DPT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Manufacturer Part Number:SI7190DP-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:2214pF @ 125V
Gate Charge (Qg) (Max) @ Vgs:72nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 250V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):250V
Description:MOSFET N-CH 250V 18.4A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C:18.4A (Tc)
Email:[email protected]

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