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SI5509DC-T1-E3
- Part Number:
- SI5509DC-T1-E3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N/P-CH 20V 6.1A 1206-8
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14495 Pieces
- Data sheet:
- SI5509DC-T1-E3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
|---|---|
| Supplier Device Package: | 1206-8 ChipFET™ |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 52 mOhm @ 5A, 4.5V |
| Power - Max: | 4.5W |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-SMD, Flat Lead |
| Other Names: | SI5509DC-T1-E3TR SI5509DCT1E3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | SI5509DC-T1-E3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 5V |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Expanded Description: | Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™ |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET N/P-CH 20V 6.1A 1206-8 |
| Current - Continuous Drain (Id) @ 25°C: | 6.1A, 4.8A |
| Email: | [email protected] |
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