SI5475DDC-T1-GE3
SI5475DDC-T1-GE3
Part Number:
SI5475DDC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 12V 6A 1206-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14368 Pieces
Data sheet:
SI5475DDC-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:1206-8 ChipFET™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:32 mOhm @ 5.4A, 4.5V
Power Dissipation (Max):2.3W (Ta), 5.7W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:SI5475DDC-T1-GE3TR
SI5475DDCT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Manufacturer Part Number:SI5475DDC-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:50nC @ 8V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):12V
Description:MOSFET P-CH 12V 6A 1206-8
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Email:[email protected]

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