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SI4100DY-T1-E3
- Part Number:
- SI4100DY-T1-E3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 100V 6.8A 8-SOIC
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17290 Pieces
- Data sheet:
- SI4100DY-T1-E3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-SO |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 63 mOhm @ 4.4A, 10V |
| Power Dissipation (Max): | 2.5W (Ta), 6W (Tc) |
| Packaging: | Original-Reel® |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Other Names: | SI4100DY-T1-E3DKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Manufacturer Part Number: | SI4100DY-T1-E3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Description: | MOSFET N-CH 100V 6.8A 8-SOIC |
| Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
| Email: | [email protected] |
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