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SI3429EDV-T1-GE3
- Part Number:
- SI3429EDV-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CHAN 20V TSOP6S
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17602 Pieces
- Data sheet:
- SI3429EDV-T1-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 6-TSOP |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 4A, 10V |
| Power Dissipation (Max): | 4.2W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Other Names: | SI3429EDV-T1-GE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Manufacturer Part Number: | SI3429EDV-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4085pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET P-CHAN 20V TSOP6S |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 8A (Tc) |
| Email: | [email protected] |
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