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RW1C020UNT2R
- Part Number:
- RW1C020UNT2R
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 20V 2A WEMT6
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12317 Pieces
- Data sheet:
- RW1C020UNT2R.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 6-WEMT |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2A, 4.5V |
| Power Dissipation (Max): | 400mW (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-563, SOT-666 |
| Other Names: | RW1C020UNT2R-ND RW1C020UNT2RTR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 10 Weeks |
| Manufacturer Part Number: | RW1C020UNT2R |
| Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 20V 2A (Ta) 400mW (Ta) Surface Mount 6-WEMT |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET N-CH 20V 2A WEMT6 |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Email: | [email protected] |
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