RT1C060UNTR
RT1C060UNTR
Part Number:
RT1C060UNTR
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CH 20V 6A TSST8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14294 Pieces
Data sheet:
RT1C060UNTR.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1V @ 1mA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSST
Series:-
Rds On (Max) @ Id, Vgs:28 mOhm @ 6A, 4.5V
Power Dissipation (Max):650mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:RT1C060UNTRTR
RT1C060UNTRTR-ND
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Manufacturer Part Number:RT1C060UNTR
Input Capacitance (Ciss) (Max) @ Vds:870pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Description:MOSFET N-CH 20V 6A TSST8
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Email:[email protected]

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