RS3E135BNGZETB
Part Number:
RS3E135BNGZETB
Manufacturer:
LAPIS Semiconductor
Description:
NCH 30V 13.5A MIDDLE POWER MOSFE
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13032 Pieces
Data sheet:
RS3E135BNGZETB.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP
Series:-
Rds On (Max) @ Id, Vgs:14.6 mOhm @ 9.5A, 10V
Power Dissipation (Max):2W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:RS3E135BNGZETBTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Manufacturer Part Number:RS3E135BNGZETB
Input Capacitance (Ciss) (Max) @ Vds:680pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:16.3nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 30V 9.5A (Tc) 2W (Tc) Surface Mount 8-SOP
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):30V
Description:NCH 30V 13.5A MIDDLE POWER MOSFE
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Email:[email protected]

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