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RN2710JE(TE85L,F)
- Part Number:
- RN2710JE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor
- Description:
- TRANS 2PNP PREBIAS 0.1W ESV
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18056 Pieces
- Data sheet:
- RN2710JE(TE85L,F).pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Supplier Device Package: | ESV |
| Series: | - |
| Resistor - Emitter Base (R2) (Ohms): | - |
| Resistor - Base (R1) (Ohms): | 4.7k |
| Power - Max: | 100mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-553 |
| Other Names: | RN2710JE(TE85LF)TR |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | RN2710JE(TE85L,F) |
| Frequency - Transition: | 200MHz |
| Expanded Description: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
| Description: | TRANS 2PNP PREBIAS 0.1W ESV |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
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