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RN1969FE(TE85L,F)
- Part Number:
- RN1969FE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor
- Description:
- TRANS 2NPN PREBIAS 0.1W ES6
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16051 Pieces
- Data sheet:
- RN1969FE(TE85L,F).pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Supplier Device Package: | ES6 |
| Series: | - |
| Resistor - Emitter Base (R2) (Ohms): | 22k |
| Resistor - Base (R1) (Ohms): | 47k |
| Power - Max: | 100mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-563, SOT-666 |
| Other Names: | RN1969FE(TE85LF)TR |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | RN1969FE(TE85L,F) |
| Frequency - Transition: | 250MHz |
| Expanded Description: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
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