RN1901FETE85LF
RN1901FETE85LF
Part Number:
RN1901FETE85LF
Manufacturer:
Toshiba Semiconductor
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14322 Pieces
Data sheet:
RN1901FETE85LF.pdf

Introduction

BYCHIPS is the stocking distributor for RN1901FETE85LF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RN1901FETE85LF by email, we will give you a best price according your plan.
Buy RN1901FETE85LF with BYCHPS
Buy with guarantee

Specifications

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:2 NPN - Pre-Biased (Dual)
Supplier Device Package:ES6
Series:-
Resistor - Emitter Base (R2) (Ohms):4.7k
Resistor - Base (R1) (Ohms):4.7k
Power - Max:100mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:RN1901FE(TE85L,F)
RN1901FETE85LFTR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:RN1901FETE85LF
Frequency - Transition:250MHz
Expanded Description:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Description:TRANS 2NPN PREBIAS 0.1W ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments