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RGT8NS65DGTL
- Part Number:
- RGT8NS65DGTL
- Manufacturer:
- LAPIS Semiconductor
- Description:
- IGBT 650V 8A 65W TO-263S
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15578 Pieces
- Data sheet:
- RGT8NS65DGTL.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 650V |
|---|---|
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 4A |
| Test Condition: | 400V, 4A, 50 Ohm, 15V |
| Td (on/off) @ 25°C: | 17ns/69ns |
| Switching Energy: | - |
| Supplier Device Package: | LPDS (TO-263S) |
| Series: | - |
| Reverse Recovery Time (trr): | 40ns |
| Power - Max: | 65W |
| Packaging: | Original-Reel® |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | RGT8NS65DGTLDKR |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 15 Weeks |
| Manufacturer Part Number: | RGT8NS65DGTL |
| Input Type: | Standard |
| IGBT Type: | Trench Field Stop |
| Gate Charge: | 13.5nC |
| Expanded Description: | IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S) |
| Description: | IGBT 650V 8A 65W TO-263S |
| Current - Collector Pulsed (Icm): | 12A |
| Current - Collector (Ic) (Max): | 8A |
| Email: | [email protected] |
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