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RDN100N20FU6
- Part Number:
- RDN100N20FU6
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 200V 10A TO-220FN
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17205 Pieces
- Data sheet:
- RDN100N20FU6.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220FN |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5A, 10V |
| Power Dissipation (Max): | 35W (Tc) |
| Packaging: | Bulk |
| Package / Case: | TO-220-3 Full Pack |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | RDN100N20FU6 |
| Input Capacitance (Ciss) (Max) @ Vds: | 543pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 200V 10A (Ta) 35W (Tc) Through Hole TO-220FN |
| Drain to Source Voltage (Vdss): | 200V |
| Description: | MOSFET N-CH 200V 10A TO-220FN |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Email: | [email protected] |
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