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NVD4809NHT4G
- Part Number:
- NVD4809NHT4G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 30V 58A DPAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16073 Pieces
- Data sheet:
- NVD4809NHT4G.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | DPAK |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 1.3W (Ta), 52W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | NVD4809NHT4G |
| Input Capacitance (Ciss) (Max) @ Vds: | 2155pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 11.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 30V 9A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Surface Mount DPAK |
| Drain to Source Voltage (Vdss): | 30V |
| Description: | MOSFET N-CH 30V 58A DPAK |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 58A (Tc) |
| Email: | [email protected] |
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