NTMSD6N303R2G
Part Number:
NTMSD6N303R2G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 30V 6A 8-SOIC
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14444 Pieces
Data sheet:
NTMSD6N303R2G.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:FETKY™
Rds On (Max) @ Id, Vgs:32 mOhm @ 6A, 10V
Power Dissipation (Max):2W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:NTMSD6N303R2GOS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Manufacturer Part Number:NTMSD6N303R2G
Input Capacitance (Ciss) (Max) @ Vds:950pF @ 24V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
FET Type:N-Channel
FET Feature:Schottky Diode (Isolated)
Expanded Description:N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC
Drain to Source Voltage (Vdss):30V
Description:MOSFET N-CH 30V 6A 8-SOIC
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Email:[email protected]

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