NTLJS3113PT1G
NTLJS3113PT1G
Part Number:
NTLJS3113PT1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET P-CH 20V 3.5A 6-WFDN
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
12928 Pieces
Data sheet:
NTLJS3113PT1G.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-WDFN (2x2)
Series:µCool™
Rds On (Max) @ Id, Vgs:40 mOhm @ 3A, 4.5V
Power Dissipation (Max):700mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:6-WDFN Exposed Pad
Other Names:NTLJS3113PT1G-ND
NTLJS3113PT1GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:31 Weeks
Manufacturer Part Number:NTLJS3113PT1G
Input Capacitance (Ciss) (Max) @ Vds:1329pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:15.7nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Description:MOSFET P-CH 20V 3.5A 6-WFDN
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Email:[email protected]

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