NSVBC114EPDXV6T1G
NSVBC114EPDXV6T1G
Part Number:
NSVBC114EPDXV6T1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS NPN/PNP BIAS SOT563
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18615 Pieces
Data sheet:
NSVBC114EPDXV6T1G.pdf

Introduction

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Specifications

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:SOT-563
Series:-
Resistor - Emitter Base (R2) (Ohms):10k
Resistor - Base (R1) (Ohms):10k
Power - Max:500mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:5 Weeks
Manufacturer Part Number:NSVBC114EPDXV6T1G
Frequency - Transition:-
Expanded Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Description:TRANS NPN/PNP BIAS SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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