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NSBA114YDXV6T1G
- Part Number:
- NSBA114YDXV6T1G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS 2PNP PREBIAS 0.5W SOT563
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12017 Pieces
- Data sheet:
- NSBA114YDXV6T1G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Supplier Device Package: | SOT-563 |
| Series: | - |
| Resistor - Emitter Base (R2) (Ohms): | 47k |
| Resistor - Base (R1) (Ohms): | 10k |
| Power - Max: | 500mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-563, SOT-666 |
| Other Names: | NSBA114YDXV6T1GOS NSBA114YDXV6T1GOS-ND NSBA114YDXV6T1GOSTR |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 4 Weeks |
| Manufacturer Part Number: | NSBA114YDXV6T1G |
| Frequency - Transition: | - |
| Expanded Description: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
| Description: | TRANS 2PNP PREBIAS 0.5W SOT563 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
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