NP36P06KDG-E1-AY
NP36P06KDG-E1-AY
Part Number:
NP36P06KDG-E1-AY
Manufacturer:
Renesas Electronics America
Description:
MOSFET P-CH 60V 36A TO-263
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13582 Pieces
Data sheet:
NP36P06KDG-E1-AY.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 1mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263
Series:-
Rds On (Max) @ Id, Vgs:29.5 mOhm @ 18A, 10V
Power Dissipation (Max):1.8W (Ta), 56W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:NP36P06KDG-E1-AY-ND
NP36P06KDG-E1-AYTR
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:NP36P06KDG-E1-AY
Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:54nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 60V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263
Drain to Source Voltage (Vdss):60V
Description:MOSFET P-CH 60V 36A TO-263
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Email:[email protected]

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