BYCHIPS is the stocking distributor for NE3517S03-T1C-A, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NE3517S03-T1C-A by email, we will give you a best price according your plan.
Buy NE3517S03-T1C-A with BYCHPS
Buy with guarantee
NE3517S03-T1C-A
- Part Number:
- NE3517S03-T1C-A
- Manufacturer:
- CEL (California Eastern Laboratories)
- Description:
- FET RF 4V 20GHZ S03
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15656 Pieces
- Data sheet:
- NE3517S03-T1C-A.pdf
Introduction
Specifications
| Voltage - Test: | 2V |
|---|---|
| Voltage - Rated: | 4V |
| Transistor Type: | HFET |
| Supplier Device Package: | S03 |
| Series: | - |
| Power - Output: | - |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 4-SMD, Flat Leads |
| Noise Figure: | 0.7dB |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | NE3517S03-T1C-A |
| Gain: | 13.5dB |
| Frequency: | 20GHz |
| Expanded Description: | RF Mosfet HFET 2V 10mA 20GHz 13.5dB S03 |
| Description: | FET RF 4V 20GHZ S03 |
| Current Rating: | 15mA |
| Current - Test: | 10mA |
| Email: | [email protected] |
Related parts for NE3517S03-T1C-A
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
NE3514S02-A | CEL | HJ-FET NCH 10DB S02 | Inquiry |
 |
GTVA261701FAV1R0XTMA1 | Infineon Technologies | GAN SIC | Inquiry |
|
NE3512S02-T1C-A | CEL | HJ-FET NCH 13.5DB S02 | Inquiry |
 |
NE3513M04-A | CEL | FET RF 4V 12GHZ M04 4SMD | Inquiry |
|
PTFB182503ELV1R0XTMA1 | Infineon Technologies | IC AMP RF LDMOS H-33288-6 | Inquiry |
|
PTFB192503ELV1R0XTMA1 | Infineon Technologies | IC AMP RF LDMOS H-33288-6 | Inquiry |
|
NE3511S02-A | CEL | HJ-FET NCH 13.5DB S02 | Inquiry |
|
NE3516S02-A | CEL | IC HJ-FET RF N-CH S02 4-MICROX | Inquiry |
|
NE3516S02-T1C-A | CEL | IC HJ-FET RF N-CH S02 4-MICROX | Inquiry |
|
NE3513M04-T2-A | CEL | FET RF 4V 12GHZ M04 4SMD | Inquiry |
 |
AFT05MS031GNR1 | NXP USA Inc. | FET RF 40V 520MHZ TO270-2G | Inquiry |
 |
NE3513M04-T2B-A | CEL | FET RF 4V 12GHZ M04 4SMD | Inquiry |
|
NE3510M04-A | CEL | FET RF 4V 4GHZ M04 | Inquiry |
|
NE3510M04-T2-A | CEL | FET RF 4V 4GHZ M04 | Inquiry |
|
NE3515S02-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Inquiry |
|
NE3512S02-A | CEL | HJ-FET NCH 13.5DB S02 | Inquiry |
|
NE3515S02-T1C-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Inquiry |
|
NE3511S02-T1C-A | CEL | IC AMP RF LNA 13.5DB S02 | Inquiry |
|
NE3515S02-T1D-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Inquiry |
|
NE3514S02-T1C-A | CEL | HJ-FET NCH 10DB S02 | Inquiry |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers