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NDD03N60Z-1G
- Part Number:
- NDD03N60Z-1G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 600V IPAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 13167 Pieces
- Data sheet:
- NDD03N60Z-1G.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | I-Pak |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
| Power Dissipation (Max): | 61W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Other Names: | NDD03N60Z-1G-ND NDD03N60Z-1GOS NDD03N60Z1G |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | NDD03N60Z-1G |
| Input Capacitance (Ciss) (Max) @ Vds: | 312pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 600V 2.6A (Tc) 61W (Tc) Through Hole I-Pak |
| Drain to Source Voltage (Vdss): | 600V |
| Description: | MOSFET N-CH 600V IPAK |
| Current - Continuous Drain (Id) @ 25°C: | 2.6A (Tc) |
| Email: | [email protected] |
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