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MURTA200120
- Part Number:
- MURTA200120
- Manufacturer:
- GeneSiC Semiconductor
- Description:
- DIODE GEN 1.2KV 100A 3 TOWER
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16061 Pieces
- Data sheet:
- MURTA200120.pdf
Introduction
Specifications
| Voltage - Forward (Vf) (Max) @ If: | 2.6V @ 100A |
|---|---|
| Voltage - DC Reverse (Vr) (Max): | 1200V (1.2kV) |
| Supplier Device Package: | Three Tower |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Series: | - |
| Packaging: | Bulk |
| Package / Case: | Three Tower |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 4 Weeks |
| Manufacturer Part Number: | MURTA200120 |
| Expanded Description: | Diode Array 1 Pair Common Cathode Standard 1200V (1.2kV) 100A Chassis Mount Three Tower |
| Diode Type: | Standard |
| Diode Configuration: | 1 Pair Common Cathode |
| Description: | DIODE GEN 1.2KV 100A 3 TOWER |
| Current - Reverse Leakage @ Vr: | 25µA @ 1200V |
| Current - Average Rectified (Io) (per Diode): | 100A |
| Email: | [email protected] |
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MURTA20060 | GeneSiC Semiconductor | DIODE GEN PURP 600V 100A 3 TOWER | Inquiry |
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