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MJ11032G
- Part Number:
- MJ11032G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS NPN DARL 120V 50A TO3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12516 Pieces
- Data sheet:
- MJ11032G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 120V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 3.5V @ 500mA, 50A |
| Transistor Type: | NPN - Darlington |
| Supplier Device Package: | TO-3 |
| Series: | - |
| Power - Max: | 300W |
| Packaging: | Tray |
| Package / Case: | TO-204AE |
| Other Names: | MJ11032GOS |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 13 Weeks |
| Manufacturer Part Number: | MJ11032G |
| Frequency - Transition: | - |
| Expanded Description: | Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3 |
| Description: | TRANS NPN DARL 120V 50A TO3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 25A, 5V |
| Current - Collector Cutoff (Max): | 2mA |
| Current - Collector (Ic) (Max): | 50A |
| Email: | [email protected] |
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