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JAN1N5807US
- Part Number:
- JAN1N5807US
- Manufacturer:
- Microsemi
- Description:
- DIODE GEN PURP 50V 6A B-MELF
- Lead Free Status / RoHS Status:
- Contains lead / RoHS non-compliant
- Available Quantity:
- 18910 Pieces
- Data sheet:
- JAN1N5807US.pdf
Introduction
Specifications
| Voltage - Forward (Vf) (Max) @ If: | 875mV @ 4A |
|---|---|
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Supplier Device Package: | B, SQ-MELF |
| Speed: | Fast Recovery = 200mA (Io) |
| Series: | Military, MIL-PRF-19500/477 |
| Reverse Recovery Time (trr): | 30ns |
| Packaging: | Bulk |
| Package / Case: | SQ-MELF, B |
| Other Names: | JAN1N5807US-MIL |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 8 Weeks |
| Manufacturer Part Number: | JAN1N5807US |
| Expanded Description: | Diode Standard 50V 6A Surface Mount B, SQ-MELF |
| Diode Type: | Standard |
| Description: | DIODE GEN PURP 50V 6A B-MELF |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Current - Average Rectified (Io): | 6A |
| Capacitance @ Vr, F: | 60pF @ 10V, 1MHz |
| Email: | [email protected] |
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