IPS110N12N3GBKMA1
IPS110N12N3GBKMA1
Part Number:
IPS110N12N3GBKMA1
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 120V 75A TO251-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18930 Pieces
Data sheet:
IPS110N12N3GBKMA1.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 83µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO251-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:11 mOhm @ 75A, 10V
Power Dissipation (Max):136W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-251-3 Stub Leads, IPak
Other Names:IPS110N12N3 G
IPS110N12N3 G-ND
IPS110N12N3GBKMA1TR-ND
SP000674456
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:IPS110N12N3GBKMA1
Input Capacitance (Ciss) (Max) @ Vds:4310pF @ 60V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3
Drain to Source Voltage (Vdss):120V
Description:MOSFET N-CH 120V 75A TO251-3
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Email:[email protected]

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