IPI028N08N3GHKSA1
IPI028N08N3GHKSA1
Part Number:
IPI028N08N3GHKSA1
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 80V 100A TO262-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19362 Pieces
Data sheet:
IPI028N08N3GHKSA1.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3.5V @ 270µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO262-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:2.8 mOhm @ 100A, 10V
Power Dissipation (Max):300W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names:IPI028N08N3 G
IPI028N08N3 G-ND
SP000395160
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:IPI028N08N3GHKSA1
Input Capacitance (Ciss) (Max) @ Vds:14200pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:206nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 80V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
Drain to Source Voltage (Vdss):80V
Description:MOSFET N-CH 80V 100A TO262-3
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Email:[email protected]

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