IPD082N10N3GBTMA1
IPD082N10N3GBTMA1
Part Number:
IPD082N10N3GBTMA1
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 100V 80A TO252-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19135 Pieces
Data sheet:
IPD082N10N3GBTMA1.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3.5V @ 75µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:8.2 mOhm @ 73A, 10V
Power Dissipation (Max):125W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:IPD082N10N3 G
IPD082N10N3 G-ND
SP000485986
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:IPD082N10N3GBTMA1
Input Capacitance (Ciss) (Max) @ Vds:3980pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Drain to Source Voltage (Vdss):100V
Description:MOSFET N-CH 100V 80A TO252-3
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Email:[email protected]

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