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IPB35N10S3L26ATMA1
- Part Number:
- IPB35N10S3L26ATMA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH TO263-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18168 Pieces
- Data sheet:
- IPB35N10S3L26ATMA1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.4V @ 39µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO263-3-2 |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 26.3 mOhm @ 35A, 10V |
| Power Dissipation (Max): | 71W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | SP000776044 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 14 Weeks |
| Manufacturer Part Number: | IPB35N10S3L26ATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-3-2 |
| Drain to Source Voltage (Vdss): | 100V |
| Description: | MOSFET N-CH TO263-3 |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Email: | [email protected] |
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