IPB12CNE8N G
IPB12CNE8N G
Part Number:
IPB12CNE8N G
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 85V 67A TO263-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16127 Pieces
Data sheet:
IPB12CNE8N G.pdf

Introduction

BYCHIPS is the stocking distributor for IPB12CNE8N G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IPB12CNE8N G by email, we will give you a best price according your plan.
Buy IPB12CNE8N G with BYCHPS
Buy with guarantee

Specifications

Vgs(th) (Max) @ Id:4V @ 83µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-2
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:12.9 mOhm @ 67A, 10V
Power Dissipation (Max):125W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:SP000096451
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:IPB12CNE8N G
Input Capacitance (Ciss) (Max) @ Vds:4340pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:64nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-2
Drain to Source Voltage (Vdss):85V
Description:MOSFET N-CH 85V 67A TO263-3
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments