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GP1M010A080N
- Part Number:
- GP1M010A080N
- Manufacturer:
- Global Power Technologies Group
- Description:
- MOSFET N-CH 900V 10A TO3PN
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12098 Pieces
- Data sheet:
- GP1M010A080N.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-3PN |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 5A, 10V |
| Power Dissipation (Max): | 312W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-3P-3, SC-65-3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | GP1M010A080N |
| Input Capacitance (Ciss) (Max) @ Vds: | 2336pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN |
| Drain to Source Voltage (Vdss): | 900V |
| Description: | MOSFET N-CH 900V 10A TO3PN |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Email: | [email protected] |
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