GA10JT12-263
GA10JT12-263
Part Number:
GA10JT12-263
Manufacturer:
GeneSiC Semiconductor
Description:
TRANS SJT 1200V 25A
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17183 Pieces
Data sheet:
GA10JT12-263.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:-
Vgs (Max):3.5V
Technology:SiC (Silicon Carbide Junction Transistor)
Supplier Device Package:-
Series:-
Rds On (Max) @ Id, Vgs:120 mOhm @ 10A
Power Dissipation (Max):170W (Tc)
Packaging:Tube
Package / Case:-
Other Names:1242-1186
GA10JT12-220ISO
GA10JT12220ISO
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:GA10JT12-263
Input Capacitance (Ciss) (Max) @ Vds:1403pF @ 800V
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:-
FET Feature:-
Expanded Description:1200V (1.2kV) 25A (Tc) 170W (Tc) Surface Mount
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):1200V (1.2kV)
Description:TRANS SJT 1200V 25A
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Email:[email protected]

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