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FQB630TM
- Part Number:
- FQB630TM
- Manufacturer:
- Fairchild/ON Semiconductor
- Description:
- MOSFET N-CH 200V 9A D2PAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15354 Pieces
- Data sheet:
- FQB630TM.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
| Power Dissipation (Max): | 3.13W (Ta), 78W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | FQB630TM |
| Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 200V 9A (Tc) 3.13W (Ta), 78W (Tc) Surface Mount D²PAK (TO-263AB) |
| Drain to Source Voltage (Vdss): | 200V |
| Description: | MOSFET N-CH 200V 9A D2PAK |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Email: | [email protected] |
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