EPC2105ENG
EPC2105ENG
Part Number:
EPC2105ENG
Manufacturer:
EPC
Description:
TRANS GAN 2N-CH 80V BUMPED DIE
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
12513 Pieces
Data sheet:
EPC2105ENG.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 2.5mA
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:14.5 mOhm @ 20A, 5V
Power - Max:-
Packaging:Bulk
Package / Case:Die
Other Names:EPC2105ENGR
917-EPC2105ENG
EPC2105ENGR
EPC2105ENGRH4
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:EPC2105ENG
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 5V
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Expanded Description:Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die
Drain to Source Voltage (Vdss):80V
Description:TRANS GAN 2N-CH 80V BUMPED DIE
Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
Email:[email protected]

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