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EMD29T2R
- Part Number:
- EMD29T2R
- Manufacturer:
- LAPIS Semiconductor
- Description:
- TRANS NPN/PNP PREBIAS 0.12W EMT6
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12030 Pieces
- Data sheet:
- EMD29T2R.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 50V, 12V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package: | EMT6 |
| Series: | - |
| Resistor - Emitter Base (R2) (Ohms): | 10k |
| Resistor - Base (R1) (Ohms): | 1k, 10k |
| Power - Max: | 120mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SOT-563, SOT-666 |
| Other Names: | EMD29T2R-ND EMD29T2RTR Q3614586 |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 10 Weeks |
| Manufacturer Part Number: | EMD29T2R |
| Frequency - Transition: | 250MHz, 260MHz |
| Expanded Description: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6 |
| Description: | TRANS NPN/PNP PREBIAS 0.12W EMT6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 100mA, 500mA |
| Email: | [email protected] |
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