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DTD143ECT216
- Part Number:
- DTD143ECT216
- Manufacturer:
- LAPIS Semiconductor
- Description:
- TRANS PREBIAS NPN 200MW SST3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 13554 Pieces
- Data sheet:
- DTD143ECT216.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Transistor Type: | NPN - Pre-Biased |
| Supplier Device Package: | SST3 |
| Series: | - |
| Resistor - Emitter Base (R2) (Ohms): | 4.7k |
| Resistor - Base (R1) (Ohms): | 4.7k |
| Power - Max: | 200mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | DTD143ECT216 |
| Frequency - Transition: | 200MHz |
| Expanded Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3 |
| Description: | TRANS PREBIAS NPN 200MW SST3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 47 @ 50mA, 5V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 500mA |
| Email: | [email protected] |
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