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DTD113ZUT106
- Part Number:
- DTD113ZUT106
- Manufacturer:
- LAPIS Semiconductor
- Description:
- TRANS PREBIAS NPN 200MW UMT3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18329 Pieces
- Data sheet:
- DTD113ZUT106.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Transistor Type: | NPN - Pre-Biased |
| Supplier Device Package: | UMT3 |
| Series: | - |
| Resistor - Emitter Base (R2) (Ohms): | 10k |
| Resistor - Base (R1) (Ohms): | 1k |
| Power - Max: | 200mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SC-70, SOT-323 |
| Other Names: | DTD113ZUT106-ND DTD113ZUT106TR |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 10 Weeks |
| Manufacturer Part Number: | DTD113ZUT106 |
| Frequency - Transition: | 200MHz |
| Expanded Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount UMT3 |
| Description: | TRANS PREBIAS NPN 200MW UMT3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 50mA, 5V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 500mA |
| Email: | [email protected] |
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