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DTC363EUT106
- Part Number:
- DTC363EUT106
- Manufacturer:
- LAPIS Semiconductor
- Description:
- TRANS PREBIAS NPN 200MW UMT3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 13320 Pieces
- Data sheet:
- DTC363EUT106.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 20V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 80mV @ 2.5mA, 50mA |
| Transistor Type: | NPN - Pre-Biased |
| Supplier Device Package: | UMT3 |
| Series: | - |
| Resistor - Emitter Base (R2) (Ohms): | 6.8k |
| Resistor - Base (R1) (Ohms): | 6.8k |
| Power - Max: | 200mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | SC-70, SOT-323 |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | DTC363EUT106 |
| Frequency - Transition: | 200MHz |
| Expanded Description: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 600mA 200MHz 200mW Surface Mount UMT3 |
| Description: | TRANS PREBIAS NPN 200MW UMT3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
| Current - Collector Cutoff (Max): | 500nA |
| Current - Collector (Ic) (Max): | 600mA |
| Email: | [email protected] |
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