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BDV65BG
- Part Number:
- BDV65BG
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS NPN DARL 100V 10A TO247
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12884 Pieces
- Data sheet:
- BDV65BG.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 100V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 2V @ 20mA, 5A |
| Transistor Type: | NPN - Darlington |
| Supplier Device Package: | TO-247 |
| Series: | - |
| Power - Max: | 125W |
| Packaging: | Tube |
| Package / Case: | TO-247-3 |
| Other Names: | BDV65BG-ND BDV65BGOS |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 2 Weeks |
| Manufacturer Part Number: | BDV65BG |
| Frequency - Transition: | - |
| Expanded Description: | Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole TO-247 |
| Description: | TRANS NPN DARL 100V 10A TO247 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 4V |
| Current - Collector Cutoff (Max): | 1mA |
| Current - Collector (Ic) (Max): | 10A |
| Email: | [email protected] |
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