APTM100H80FT1G
Part Number:
APTM100H80FT1G
Manufacturer:
Microsemi
Description:
MOSFET 4N-CH 1000V 11A SP1
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19643 Pieces
Data sheet:
1.APTM100H80FT1G.pdf2.APTM100H80FT1G.pdf

Introduction

BYCHIPS is the stocking distributor for APTM100H80FT1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for APTM100H80FT1G by email, we will give you a best price according your plan.
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Specifications

Vgs(th) (Max) @ Id:5V @ 1mA
Supplier Device Package:SP1
Series:-
Rds On (Max) @ Id, Vgs:960 mOhm @ 9A, 10V
Power - Max:208W
Packaging:Bulk
Package / Case:SP1
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:APTM100H80FT1G
Input Capacitance (Ciss) (Max) @ Vds:3876pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
FET Type:4 N-Channel (H-Bridge)
FET Feature:Standard
Expanded Description:Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 11A 208W Chassis Mount SP1
Drain to Source Voltage (Vdss):1000V (1kV)
Description:MOSFET 4N-CH 1000V 11A SP1
Current - Continuous Drain (Id) @ 25°C:11A
Email:[email protected]

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