BYCHIPS is the stocking distributor for APT45GP120B2DQ2G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for APT45GP120B2DQ2G by email, we will give you a best price according your plan.
Buy APT45GP120B2DQ2G with BYCHPS
Buy with guarantee
APT45GP120B2DQ2G
- Part Number:
- APT45GP120B2DQ2G
- Manufacturer:
- Microsemi
- Description:
- IGBT 1200V 113A 625W TMAX
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 13290 Pieces
- Data sheet:
- APT45GP120B2DQ2G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
|---|---|
| Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 45A |
| Test Condition: | 600V, 45A, 5 Ohm, 15V |
| Td (on/off) @ 25°C: | 18ns/100ns |
| Switching Energy: | 900µJ (on), 905µJ (off) |
| Series: | POWER MOS 7® |
| Power - Max: | 625W |
| Packaging: | Tube |
| Package / Case: | TO-247-3 Variant |
| Other Names: | APT45GP120B2DQ2GMI APT45GP120B2DQ2GMI-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 22 Weeks |
| Manufacturer Part Number: | APT45GP120B2DQ2G |
| Input Type: | Standard |
| IGBT Type: | PT |
| Gate Charge: | 185nC |
| Expanded Description: | IGBT PT 1200V 113A 625W Through Hole |
| Description: | IGBT 1200V 113A 625W TMAX |
| Current - Collector Pulsed (Icm): | 170A |
| Current - Collector (Ic) (Max): | 113A |
| Email: | [email protected] |
Related parts for APT45GP120B2DQ2G
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
APT45GP120BG | Microsemi Corporation | IGBT 1200V 100A 625W TO247 | Inquiry |
 |
APT45GP120J | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Inquiry |
|
APT45GP120JDQ2 | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Inquiry |
 |
APT45GR65SSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Inquiry |
 |
RJP6085DPK-00#T0 | Renesas Electronics America | IGBT 600V 40A 178.5W TO-3P | Inquiry |
 |
IKW25T120FKSA1 | Infineon Technologies | IGBT 1200V 50A 190W TO247-3 | Inquiry |
 |
APT45M100J | Microsemi Corporation | MOSFET N-CH 1000V 45A SOT-227 | Inquiry |
|
APT45GR65BSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Inquiry |
 |
IXGK50N60B2D1 | IXYS | IGBT 600V 75A 400W TO264 | Inquiry |
|
APT45GR65B2DU30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Inquiry |
|
APT45GR65B | Microsemi Corporation | IGBT 650V 92A 357W TO-247 | Inquiry |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog