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2SK4125-1E
- Part Number:
- 2SK4125-1E
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 600V 17A
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17041 Pieces
- Data sheet:
- 2SK4125-1E.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | - |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-3P-3L |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 610 mOhm @ 7A, 10V |
| Power Dissipation (Max): | 2.5W (Ta), 170W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-3P-3, SC-65-3 |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | 2SK4125-1E |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 600V 17A (Ta) 2.5W (Ta), 170W (Tc) Through Hole TO-3P-3L |
| Drain to Source Voltage (Vdss): | 600V |
| Description: | MOSFET N-CH 600V 17A |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
| Email: | [email protected] |
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