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2SA1013-O,T6MIBF(J
- Part Number:
- 2SA1013-O,T6MIBF(J
- Manufacturer:
- Toshiba Semiconductor
- Description:
- TRANS PNP 1A 160V TO226-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14950 Pieces
- Data sheet:
- 2SA1013-O,T6MIBF(J.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 160V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
| Transistor Type: | PNP |
| Supplier Device Package: | TO-92L |
| Series: | - |
| Power - Max: | 900mW |
| Packaging: | Bulk |
| Package / Case: | TO-226-3, TO-92-3 Long Body |
| Other Names: | 2SA1013-OT6MIBF(J 2SA1013OT6MIBFJ |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | 2SA1013-O,T6MIBF(J |
| Frequency - Transition: | 50MHz |
| Expanded Description: | Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92L |
| Description: | TRANS PNP 1A 160V TO226-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 200mA, 5V |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| Current - Collector (Ic) (Max): | 1A |
| Email: | [email protected] |
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