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2N6667G
- Part Number:
- 2N6667G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS PNP DARL 60V 10A TO220AB
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16332 Pieces
- Data sheet:
- 2N6667G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 60V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 100mA, 10A |
| Transistor Type: | PNP - Darlington |
| Supplier Device Package: | TO-220AB |
| Series: | - |
| Power - Max: | 2W |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | 2N6667GOS |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 2 Weeks |
| Manufacturer Part Number: | 2N6667G |
| Frequency - Transition: | - |
| Expanded Description: | Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220AB |
| Description: | TRANS PNP DARL 60V 10A TO220AB |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 3V |
| Current - Collector Cutoff (Max): | 1mA |
| Current - Collector (Ic) (Max): | 10A |
| Email: | [email protected] |
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