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Toshiba MOSFETs have active-clamp structure

With the requirement for a minimum of external components the single SSM3K357R and the dual SSM6N357R are suited to drive inductive loads, such as mechanical relays or solenoids.

The new 357 series protects drivers against possible damage from voltage surges, as caused by back EMF from the inductive load. It integrates a pull-down resistor, series resistor and Zener diode, all of which helps reduce the external part count and save PCB space.

Toshiba-SSM3K357R mosfet protectedThe devices withstand a maximum drain-source voltage (VDSS) of 60V and a maximum drain current (ID) of 0.65A. The low drain-source on-resistance (RDS(ON)) of 800mΩ at VGS=5.0V ensures efficient operation with minimal heat generation.

The single SSM3K357R is housed in a 2.9 x 2.4 x 0.8mm SOT-23F class package, and suitable for relay and solenoid control due to the low operating voltage of 3.0V. As the device is qualified according to AEC-Q101 it is suited for automotive as well as many industrial applications.

The dual SSM6N357R is housed in a 2.9mm x 2.8mm x 0.8mm TSOP6F class package, which enables usage of two devices on a board requiring 42% less mounting area than using two of the single devices.