Called CUHS10F60, due to the newly developed 2.5 x 1.4mm US2H package (SOD-323HE) it features a thermal resistance of 105°C/W. “The package’s thermal resistance has been reduced by about 50% compared to the conventional USC package,” said the firm.

In comparison to Toshiba’s earlier CUS04 Schottky diode, maximum reverse current has been reduced by around 60%  – to 40µA.

Reverse voltage is high for a silicon Schottky – 60V (the leakage above is measured at this value)- while forward voltage is typically 0.46V at 500mA and 0.56V at the device’s maximum current of 1A.

The Schottky is available for shipping in production quantities now.