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TRS8E65C,S1Q
- Part Number:
- TRS8E65C,S1Q
- Manufacturer:
- Toshiba Semiconductor
- Description:
- DIODE SCHOTTKY 650V 8A TO220-2L
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18953 Pieces
- Data sheet:
- TRS8E65C,S1Q.pdf
Introduction
Specifications
| Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
|---|---|
| Voltage - DC Reverse (Vr) (Max): | 650V |
| Supplier Device Package: | TO-220-2L |
| Speed: | No Recovery Time > 500mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 0ns |
| Packaging: | Tube |
| Package / Case: | TO-220-2 |
| Other Names: | TRS8E65C,S1Q(S TRS8E65CS1Q |
| Operating Temperature - Junction: | 175°C (Max) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | TRS8E65C,S1Q |
| Expanded Description: | Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2L |
| Diode Type: | Silicon Carbide Schottky |
| Description: | DIODE SCHOTTKY 650V 8A TO220-2L |
| Current - Reverse Leakage @ Vr: | 90µA @ 650V |
| Current - Average Rectified (Io): | 8A (DC) |
| Capacitance @ Vr, F: | 44pF @ 650V, 1MHz |
| Email: | [email protected] |
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