TPN7R506NH,L1Q
TPN7R506NH,L1Q
Part Number:
TPN7R506NH,L1Q
Manufacturer:
Toshiba Semiconductor
Description:
MOSFET N-CH 60V 26A 8TSON
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18025 Pieces
Data sheet:
TPN7R506NH,L1Q.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 200µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:7.5 mOhm @ 13A, 10V
Power Dissipation (Max):700mW (Ta), 42W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:TPN7R506NH,L1Q(M
TPN7R506NHL1QTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:TPN7R506NH,L1Q
Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
Drain to Source Voltage (Vdss):60V
Description:MOSFET N-CH 60V 26A 8TSON
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Email:[email protected]

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