TPN2R503NC,L1Q
Part Number:
TPN2R503NC,L1Q
Manufacturer:
Toshiba Semiconductor
Description:
MOSFET N CH 30V 40A 8TSON-ADV
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13855 Pieces
Data sheet:
TPN2R503NC,L1Q.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.3V @ 500µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSVIII
Rds On (Max) @ Id, Vgs:2.5 mOhm @ 20A, 10V
Power Dissipation (Max):700mW (Ta), 35W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:TPN2R503NC,L1Q(M
TPN2R503NCL1Q
TPN2R503NCL1QTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:TPN2R503NC,L1Q
Input Capacitance (Ciss) (Max) @ Vds:2230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 30V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Drain to Source Voltage (Vdss):30V
Description:MOSFET N CH 30V 40A 8TSON-ADV
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Email:[email protected]

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