TPN22006NH,LQ
TPN22006NH,LQ
Part Number:
TPN22006NH,LQ
Manufacturer:
Toshiba Semiconductor
Description:
MOSFET N CH 60V 9A 8-TSON
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14194 Pieces
Data sheet:
TPN22006NH,LQ.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 100µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:22 mOhm @ 4.5A, 10V
Power Dissipation (Max):700mW (Ta), 18W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:TPN22006NH,LQ(S
TPN22006NHLQ
TPN22006NHLQTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:TPN22006NH,LQ
Input Capacitance (Ciss) (Max) @ Vds:710pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
Drain to Source Voltage (Vdss):60V
Description:MOSFET N CH 60V 9A 8-TSON
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Email:[email protected]

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